دیتاشیت ATP101-TL-H
مشخصات دیتاشیت
| نام دیتاشیت |
ATP101
|
| حجم فایل |
345.518
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi ATP101-TL-H
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
-
-
Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
25A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
30mOhm @ 13A, 10V
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Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
18.5nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
875pF @ 10V
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FET Feature:
-
-
Power Dissipation (Max):
30W (Tc)
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
ATPAK
-
Package / Case:
ATPAK (2 leads+tab)
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Base Part Number:
ATP101
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detail:
P-Channel 30V 25A (Ta) 30W (Tc) Surface Mount ATPAK
